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Non-Volatile Memory - Resistive Random Access Memory RRAM
Available for: Licensing and Joint Development<h2>Summary</h2>{{start}} Research within the Department of Electronic and Electrical Engineering (E&EE) at UCL has led to the realisation of a new memory device, based on resistive switching which has the potential to be integrated directly onto silicon. The memory device exhibits very ...
Published: 25/07/2014   |   Inventor(s): Tony Kenyon, Adnan Mehonic
Keywords(s): Electronics, Semiconductors
Category(s): Computing, Semiconductors
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